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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3 package Complement to type MJ802 Excellent safe operating area APPLICATIONS For use as an output device in complementary audio amplifiers to 100-Watts music power per channel PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ4502 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC VALUE -100 -90 -4 -30 -7.5 UNIT V V V A A W ae ae Emitter-base voltage Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 200 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MJ4502 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -90 V VCEsat Collector-emitter saturation voltage IC=-7.5A; IB=-0.75A -0.8 V VBEsat Base-emitter saturation voltage IC=-7.5A; IB=-0.75A -1.3 V VBE Base-emitter on voltage IC=-7.5A ; VCE=-2V VCB=-100V; IE=0 TC=150ae VEB=-4V; IC=0 -1.3 -1.0 -5.0 -1.0 V ICBO Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=-7.5A ; VCE=-2V 25 fT Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz CHA IN E SEM NG OND IC 2.0 TOR UC 100 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ4502 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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